高级检索

二硫化钼层间耦合调控及电热输运性质研究进展

Research Progress on Interlayer Coupling Modulation and Electronic-Thermal Transport Properties of Molybdenum Disulfide

  • 摘要: 二硫化钼(MoS2)作为过渡金属硫族化合物的典型代表,凭借优异的电学、光学和热学性能,在电子器件、热管理和能源转换等领域展现出广阔的应用前景。MoS2层内由强共价键结合,层间通过弱范德华力堆叠,这一结构特征使层间耦合成为调控其物理性质的关键自由度。层间耦合不仅影响能带结构与载流子输运行为,还通过调制声子色散和散射过程显著影响晶格热输运性质,因而成为连接微观原子构型与宏观电热性能的核心纽带。本文围绕层间耦合工程对MoS2电子-声子输运行为的调控作用,系统梳理层间耦合的物理机制,总结其耦合强度的主要表征方法,归纳不同调控策略对层间耦合状态的作用机制,并分析层间耦合对电子性质和声子行为的影响规律。本综述旨在阐释层间耦合实现电热输运协同调控的内在逻辑,为MoS2基功能器件的性能优化及产业化应用提供理论支撑与设计思路。

     

    Abstract: Molybdenum disulfide (MoS2), a representative transition metal dichalcogenide, has attracted extensive research interest owing to its exceptional electronic, optical, and thermal properties, offering great potential for applications in next-generation electronic devices, thermal management systems, and energy conversion technologies. Structurally, MoS2 consists of strongly bonded S-Mo-S layers through in-plane covalent interactions, while adjacent layers are held together by weak van der Waals forces. This unique layered architecture provides an additional structural degree of freedom, where interlayer coupling plays a critical role in regulating the intrinsic physical properties of MoS2. Interlayer coupling not only governs the electronic band structure and carrier transport behavior but also strongly influences phonon dispersion, scattering processes, and lattice thermal transport. Therefore, interlayer coupling serves as a critical link between atomic-scale structural configurations and macroscopic electronic-thermal performance. This review summarized recent advances in interlayer couplingmodulation and its effects on electron-phonon transport in MoS2. The fundamental mechanisms of interlayer interactions were first introduced, followed by a comprehensive overview of advanced characterization techniques for evaluating interlayer coupling strength and structural evolution. Subsequently, various strategies for engineering interlayer coupling were discussed. The influence of interlayer coupling on electronic structures, carrier transport, phonon dynamics, and thermoelectric performance was further analyzed. Finally, the challenges and future perspectives of interlayer coupling engineering toward high-performance MoS2-based functional devices are presented. This review provides insights into the intrinsic relationship between interlayer coupling and electron-phonon transport regulation, offering fundamental understanding and design principles for the development of advanced two-dimensional materials and their practical applications.

     

/

返回文章
返回