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YANG Z, HAN S J, SU X L. Research Progress on Interlayer Coupling Modulation and Electronic-Thermal Transport Properties of Molybdenum DisulfideJ. Journal of Anhui University of Technology (Natural Science), xxxx, x(x):x-xx. DOI: 10.12415/j.issn.1671-7872.26123
Citation: YANG Z, HAN S J, SU X L. Research Progress on Interlayer Coupling Modulation and Electronic-Thermal Transport Properties of Molybdenum DisulfideJ. Journal of Anhui University of Technology (Natural Science), xxxx, x(x):x-xx. DOI: 10.12415/j.issn.1671-7872.26123

Research Progress on Interlayer Coupling Modulation and Electronic-Thermal Transport Properties of Molybdenum Disulfide

  • Molybdenum disulfide (MoS2), a representative transition metal dichalcogenide, has attracted extensive research interest owing to its exceptional electronic, optical, and thermal properties, offering great potential for applications in next-generation electronic devices, thermal management systems, and energy conversion technologies. Structurally, MoS2 consists of strongly bonded S-Mo-S layers through in-plane covalent interactions, while adjacent layers are held together by weak van der Waals forces. This unique layered architecture provides an additional structural degree of freedom, where interlayer coupling plays a critical role in regulating the intrinsic physical properties of MoS2. Interlayer coupling not only governs the electronic band structure and carrier transport behavior but also strongly influences phonon dispersion, scattering processes, and lattice thermal transport. Therefore, interlayer coupling serves as a critical link between atomic-scale structural configurations and macroscopic electronic-thermal performance. This review summarized recent advances in interlayer couplingmodulation and its effects on electron-phonon transport in MoS2. The fundamental mechanisms of interlayer interactions were first introduced, followed by a comprehensive overview of advanced characterization techniques for evaluating interlayer coupling strength and structural evolution. Subsequently, various strategies for engineering interlayer coupling were discussed. The influence of interlayer coupling on electronic structures, carrier transport, phonon dynamics, and thermoelectric performance was further analyzed. Finally, the challenges and future perspectives of interlayer coupling engineering toward high-performance MoS2-based functional devices are presented. This review provides insights into the intrinsic relationship between interlayer coupling and electron-phonon transport regulation, offering fundamental understanding and design principles for the development of advanced two-dimensional materials and their practical applications.
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